MOS Gate Drive Applications
Switching Applications

• Small footprint due to a small and thin package
• High DC current gain : PNP hFE = 200 to 500 (IC =－0.2 A)
                                     : NPN hFE = 200 to 500 (IC = 0.2 A)
• Low collector-emitter saturation : PNP VCE (sat) =－ 0.20 V (max)
                                                     : NPN VCE (sat) = 0.14 V (max)
• High-speed switching : PNP tf = 40 ns (typ.)
                                     : NPN tf = 45 ns (typ.)