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HN1D01F(2007) Даташит - Toshiba

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HN1D01F

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TOSHIBA Diode Silicon Epitaxial Planar Type

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Ultra-High-Speed Switching Applications

● Small package
● Low forward voltage : VF (3) = 0.92 V (typ.)
● Fast reverse recovery time : trr = 1.6 ns (typ.)
● Small total capacitance : CT = 2.2 pF (typ.)

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