datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  ETC  >>> HMG20N60A PDF

HMG20N60A Даташит - ETC

HMG20N60A image

Номер в каталоге
HMG20N60A

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
5 Pages

File Size
319.3 kB

производитель
ETC
ETC ETC

[Shenzhen Huazhimei Semiconductor Co., Ltd]

description
HMG20N60A insulated gate bipolar transistor adopts a new generation of field stop (Field Stop) process production, with low conduction loss and switching loss, the positive temperature coefficient is easy to combine Linked applications and other features. This product can be applied to induction heating UPS, SMPS and PFC etc. area.


FEATUREs
♦ 20A, 600V, VCE(sat)(typical value)=2.0V@IC=20A
♦ Low conduction loss
♦ Ultra-fast switching speed
♦ High breakdown voltage


Номер в каталоге
Компоненты Описание
PDF
производитель
600V Insulated Gate Bipolar Transistor
Unspecified
650V 20A Insulated Gate Bipolar Transistor
ROHM Semiconductor
40A, 600V Insulated Gate Bipolar Transistor
Unspecified
Insulated Gate Bipolar Transistor
ON Semiconductor
Insulated Gate Bipolar Transistor
ON Semiconductor
Insulated Gate Bipolar Transistor
Toshiba
Insulated Gate Bipolar Transistor
Motorola => Freescale
Insulated Gate Bipolar Transistor
Renesas Electronics
Insulated Gate Bipolar Transistor
International Rectifier
Insulated Gate Bipolar Transistor ( Rev : 2013 )
International Rectifier

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]