[Shenzhen H&M Semiconductor Co.Ltd]

Description
The HM100N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

General Features
● VDS =20V,ID =100A
   RDS(ON) <5.5mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation

APPLICATION
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply