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HL7852G Даташит - Hitachi -> Renesas Electronics

HL7852G image

Номер в каталоге
HL7852G

Компоненты Описание

Other PDF
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PDF
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page
4 Pages

File Size
20.6 kB

производитель
Hitachi
Hitachi -> Renesas Electronics Hitachi

Description
The HL7852G is a high power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for optical disk memories, levelers and various other types of optical equipment. Hermetic sealing of the package assures high reliability.


FEATUREs
● Visible light output: λp = 785 nm Typ
● Small beam ellipticity: 9.5:23
● High output power: 50 mW (CW)
● Built-in monitor photodiode


Номер в каталоге
Компоненты Описание
PDF
производитель
GaAlAs Laser Diode
Sony Semiconductor
GaAlAs Laser Diode
Opnext. Inc.
GaAlAs Laser Diode
Opnext. Inc.
GaAlAs Laser Diode
Opnext. Inc.
GaAlAs Laser Diode
Opnext. Inc.
GaAlAs Laser Diode
Hitachi -> Renesas Electronics
GaAlAs Laser Diode
Sony Semiconductor
GaAlAs Laser Diode
Opnext. Inc.
GaAlAs Laser Diode
Opnext. Inc.
GaAlAs Laser Diode
Hitachi -> Renesas Electronics

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