Description
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.

FEATUREs
• 10A and 12A, 400V and 500V
• VCE(ON): 2.5V Max.
• TFI: 1µs, 0.5µs
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance
• No Anti-Parallel Diode

APPLICATIONs
• Power Supplies
• Motor Drives
• Protection Circuits