Description
The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only
moderately between +25°C and +150°C. The diode used in parallel with the IGBT is an ultrafast (tRR< 60ns) with soft recovery characteristic.

FEATUREs
• 20A, 500V
• Latch Free Operation
• Typical Fall Time < 500ns
• High Input Impedance
• Low Conduction Loss
• With Anti-Parallel Diode
•tRR< 60ns