Description
The HGTG20N120E2 is a MOS gated, high voltage switch ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25^oC and +150^oC.

Features
 34A, 1200V
 Latch Free Operation
 Typical Fall Time - 780ns
 High Input Impedance
 Low Conduction Loss