Description
HGTG18N120BND is based on Non− Punch Through (NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.

FEATUREs
• 26 A, 1200 V, TC = 110°C
• Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
• Typical Fall Time . . . . . . . . . . . . . 140 ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• This Device is Pb−Free