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HGT1S20N35G3VLS Даташит - Fairchild Semiconductor

20N35GVL image

Номер в каталоге
HGT1S20N35G3VLS

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8 Pages

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198.9 kB

производитель
Fairchild
Fairchild Semiconductor Fairchild

Description
This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.


FEATUREs
• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• TJ = 175°C
• Ignition Energy Capable

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