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HAF2017S Даташит - Renesas Electronics

HAF2017 image

Номер в каталоге
HAF2017S

Компоненты Описание

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page
9 Pages

File Size
129.1 kB

производитель
Renesas
Renesas Electronics Renesas

Descriptions
This FET has the over temperature shutdown capability sensing the junction temperature.This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc..

Features
•  Logic level operation (4 to 6 V Gate drive)
•  High endurance capability against to the short circuit
•  Built-in the over temperature shutdown circuit
•  Latch type shutdown operation (Need 0 voltage recovery)

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Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon N Channel MOS FET Series Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Renesas Electronics
Silicon N Channel MOS FET Series Power Switching
Hitachi -> Renesas Electronics

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