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HOME  >>>  Hi-Sincerity Mocroelectronics  >>> H45N03E PDF

H45N03E Даташит - Hi-Sincerity Mocroelectronics

H45N03E image

Номер в каталоге
H45N03E

Компоненты Описание

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page
5 Pages

File Size
49.8 kB

производитель
HSMC
Hi-Sincerity Mocroelectronics HSMC

Features
• RDS(on)=15mΩ@VGS=10V, ID=25A
• RDS(on)=20mΩ@VGS=4.5V, ID=25A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM

Page Link's: 1  2  3  4  5 

Номер в каталоге
Компоненты Описание
PDF
производитель
25V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
25V N-Channel Enhancement Mode MOSFET
PANJIT INTERNATIONAL
25V N-Channel Enhancement Mode MOSFET
PANJIT INTERNATIONAL
N-Channel Enhancement-Mode MOSFET (25V, 40A)
Hi-Sincerity Mocroelectronics
30V, 45A N-CHANNEL ENHANCEMENT MODE
Unisonic Technologies
25V P-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
45A , 100V , RDS(ON) 22 mΩ N-Channel Enhancement Mode MOSFET
Secos Corporation.
25V N-Channel Enhancement Mode Field Effect Transistor
PANJIT INTERNATIONAL
45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Fairchild Semiconductor
45A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs
Harris Semiconductor

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