H4422S Даташит - Hi-Sincerity Mocroelectronics
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H4422S
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5 Pages
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139.7 kB
производитель
Hi-Sincerity Mocroelectronics
Features
• RDS(on)=13.5mΩ@VGS=10V, ID=11A
• RDS(on)=24mΩ@VGS=4.5V, ID=5A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
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Компоненты Описание
PDF
производитель
30V N-Channel Enhancement Mode MOSFET
Shanghai Leiditech Electronic Technology Co., Ltd
30V N-Channel Enhancement Mode MOSFET
Shanghai Leiditech Electronic Technology Co., Ltd
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