Features
• H10N60F is a High voltage NChannel enhancement mode power MOSFET chip fabricated in advanced silicon epitaxial planar technology
• Advanced termination scheme to provide enhanced voltageblocking capability
• Avalanche Energy Specified
• Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
• The packaged product is widely used in AC-DC power suppliers, DCDC converters and Hbridge PWM motor drivers

APPLICATIONs
• Switch Mode Power Supply
• Uninterruptable Power Supply
• High Speed Power Switching