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GT8G132 Даташит - Toshiba

GT8G132 image

Номер в каталоге
GT8G132

Other PDF
  2002  

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page
6 Pages

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183.5 kB

производитель
Toshiba
Toshiba Toshiba

Strobe Flash Applications

• Supplied in compact and thin package requires only a small
   mounting area
• 5th generation (trench gate structure) IGBT
• Enhancement-mode
• 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A)
• Peak collector current: IC = 150 A (max)


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PDF
производитель
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT ( Rev : V2 )
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT ( Rev : 2002 )
Toshiba
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
Toshiba

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