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GP801DCM18 Даташит - Dynex Semiconductor

GP801DCM18 image

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GP801DCM18

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10 Pages

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The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.
The GP801DCM18 is an 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability.


FEATURES
■ Low VCE(SAT)
■ 800A Per Module
■ High Thermal Cycling Capability
■ Non Punch Through Silicon
■ Isolated MMC Base with AlN Substrates
Hi-Reliabi


APPLICATIONS
■ High Reliability
■ Motor Controllers
■ Traction Drives
■ Low Loss System Retrofit

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