datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Dynex Semiconductor  >>> GP1200ESM33 PDF

GP1200ESM33 Даташит - Dynex Semiconductor

GP1200ESM33 image

Номер в каталоге
GP1200ESM33

Компоненты Описание

Other PDF
  no available.

PDF
DOWNLOAD     

page
9 Pages

File Size
141.6 kB

производитель
Dynex
Dynex Semiconductor Dynex

The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A.
The GP1200ESM33 is a single switch 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability.


FEATURES
■ High Thermal Cycling Capability
■ Non Punch Through Silicon
■ Isolated MMC Base with AlN Substrates


APPLICATIONS
■ High Reliability Inverters
■ Motor Controllers
■ Traction Drives
■ Resonant Converters

Page Link's: 1  2  3  4  5  6  7  8  9 

Номер в каталоге
Компоненты Описание
PDF
производитель
Hi-Reliability Single Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Single Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Single Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Single Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Single Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Dual Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Dual Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Dual Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Chopper Switch IGBT Module
Dynex Semiconductor
Hi-Reliability Single Switch Low VCE(SAT) IGBT Module
Dynex Semiconductor

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]