INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

FEATUREs
•Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
Circuit Rated to 10µs @ 125°C, VGE= 15V
•Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
previous generation
•IGBT co-packaged with HEXFRED^TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
•Industry standard TO-220AB package

Benefits
•Latest generation 4 IGBTs offer highest power density motor controls possible
•HEXFRED^TM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses
•This part replaces the IRGBC20KD2 and IRGBC20MD2 products
•For hints see design tip 97003