General Description
These P-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

FEATUREs
• -5.3A, -60V, RDS(on) = 0.415Ω @VGS = 10 V
• Low gate charge (typical 6.3 nC)
• Low Crss ( typical 25 pF )
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating