DESCRIPTION AND APPLICATIONS
The FP4050 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.50 um by 400 um Schottky barrier gate. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances. The FP4050 features Si3N4 passivation.
Typical applications include commercial and military high-performance power amplifiers, including SATCOM uplink transmitters, PCS/Cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. This device is also suitable as a power stage for WLAN and ISM band spread spectrum applications.

FEATURES
◆ 48 dBm IP3 at 2 GHz
◆ 34 dBm P-1dB at 2 GHz
◆ 14 dB Power Gain at 2 GHz