20V Dual N-Channel Enhancement-Mode MOSFET

VDS= 20V ID= 6.5V ESD Protected : 2000V
RDS(ON), Vgs@2.5V, Ids@5.5A = 32mΩ
RDS(ON), Vgs@4.5V, Ids@6.5A = 24mΩ

FEATUREs
   Advanced trench process technology
   High Density Cell Design For Ultra Low On-Resistance
   Specially Designed for Li ion battery packs use
   Designed for battery switch applications
   Battery Swicth, ESD protected