Description
The FM25L04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

FEATUREs
4K bit Ferroelectric Nonvolatile RAM
● Organized as 512 x 8 bits
● High Endurance 10 Trillion (1013) Read/Writes
● NoDelay™ Writes
● Advanced High-Reliability Ferroelectric Process

Fast Serial Peripheral Interface - SPI
● Up to 10 MHz Frequency
● Direct Hardware Replacement for EEPROM
● SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Sophisticated Write Protection Scheme
● Hardware Protection
● Software Protection

Low Power Consumption
● Low Voltage Operation 3.0-3.6V
● 6 μA Standby Current (+85C)

Industry Standard Configuration
● Automotive Temperature -40 °C to +125 °C
● o Qualified to AEC Q100 Specification
● 8-pin “Green”/RoHS SOIC Package