Description
   The FM25H20 is a 2-megabit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by Serial Flash and other nonvolatile memories.

FEATUREs
2M bit Ferroelectric Nonvolatile RAM
• Organized as 256K x 8 bits
• High Endurance 100 Trillion (1014) Read/Writes
• 10 Year Data Retention
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI
• Up to 40 MHz Frequency
• Direct Hardware Replacement for Serial Flash
• SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Write Protection Scheme
• Hardware Protection
• Software Protection

Low Power Consumption
• Low Voltage Operation 2.7V – 3.6V
• Sleep Mode Current 3 µA (typ.)

Industry Standard Configurations
• Industrial Temperature -40°C to +85°C
• 8-pin “Green”/RoHS TDFN Package
• 8- pin “Green”/RoHS EIAJ SOIC Package