Description
The FM25C160B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

FEATUREs
16K bit Ferroelectric Nonvolatile RAM
•  Organized as 2,048 x 8 bits
•  High Endurance 1 Trillion (10¹²) Read/Writes
•  38 year Data Retention
•  NoDelay™ Writes
•  Advanced High-Reliability Ferroelectric Process

Very Fast Serial Peripheral Interface - SPI
•  Up to 20 MHz maximum Bus Frequency
•  Direct hardware replacement for EEPROM
•  SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)

Sophisticated Write Protection Scheme
•  Hardware Protection
•  Software Protection

Low Power Consumption
•  250 µA Active Current (1 MHz)
•  4 µA (typ.) Standby Current

Industry Standard Configuration
•  Industrial Temperature -40°C to +85°C
•  8-pin “Green”/RoHS SOIC (-G)