Description
The FM23MLD16 is a 512Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and very high write endurance make F-RAM superior to other types of memory.

FEATUREs
8Mbit Ferroelectric Nonvolatile RAM
• Organized as 512Kx16
• Configurable as 1Mx8 Using /UB, /LB
• High Endurance 100 Trillion (1014) Read/Writes
• NoDelay™ Writes
• Page Mode Operation to 33MHz
• Advanced High-Reliability Ferroelectric Process

SRAM Compatible
• JEDEC 512Kx16 SRAM Pinout
• 60 ns Access Time, 115 ns Cycle Time

Advanced Features
• Low VDD Monitor Protects Memory against
   Inadvertent Writes

Superior to Battery-backed SRAM Modules
• No Battery Concerns
• Monolithic Reliability
• True Surface Mount Solution, No Rework Steps
• Superior for Moisture, Shock, and Vibration

Low Power Operation
• 2.7V – 3.6V Power Supply
• 14 mA Active Current

Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 48-pin “Green”/RoHS FBGA package