Description
The FM21LD16 is a 128Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory.

FEATUREs
2Mbit Ferroelectric Nonvolatile RAM
• Organized as 128Kx16
• Configurable as 256Kx8 Using /UB, /LB
• 1014 Read/Write Cycles
• NoDelay™ Writes
• Page Mode Operation to 33MHz
• Advanced High-Reliability Ferroelectric Process

SRAM Compatible
• JEDEC 128Kx16 SRAM Pinout
• 60 ns Access Time, 110 ns Cycle Time

Advanced Features
• Software Programmable Block Write Protect

Superior to Battery-backed SRAM Modules
• No Battery Concerns
• Monolithic Reliability
• True Surface Mount Solution, No Rework Steps
• Superior for Moisture, Shock, and Vibration

Low Power Operation
• 2.7V – 3.6V Power Supply
• Low Standby Current (90µA typ.)
• Low Active Current (8 mA typ.)

Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 48-ball “Green”/RoHS FBGA package
• Pin compatible with FM22LD16 (4Mb) and
   FM23MLD16 (8Mb)