Description
The FM18L08 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and reads and writes like a RAM. It provides data retention for 45 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make FRAM superior to other types of nonvolatile memory.

FEATUREs
256K bit Ferroelectric Nonvolatile RAM
• Organized as 32,768 x 8 bits
• 45 year Data Retention
• Unlimited Read/Write Cycles
• NoDelay™ Writes
• Advanced High-Reliability Ferroelectric Process

Superior to Battery-Backed SRAM
• No Battery Concerns
• Monolithic Reliability
• True Surface Mount Solution, No Rework Steps
• Superior for Moisture, Shock, and Vibration
• Resistant to Negative Voltage Undershoots

SRAM & EEPROM Compatible
• JEDEC 32Kx8 SRAM & EEPROM pinout
• 70 ns Access Time
• 140 ns Cycle Time

Low Power Operation
• 3.0V to 3.65V Operation
• 15 mA Active Current
• 15 µA Standby Current

Industry Standard Configuration
• Industrial Temperature -40° C to +85° C
• 32-pin “Green” TSOP Package
• 28-pin SOIC or DIP Package
• “Green” Packaging Options