General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

FEATUREs
• 11.2 A, 20 V.
   RDS(ON) = 9 mW @ VGS = 4.5 V
   RDS(ON) = 11 mW @ VGS = 2.5 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability in a
   smaller footprint than SO8
  
Applications
• Synchronous rectifier
• DC/DC converter