General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

FEATUREs
• 50 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS = 10 V
                     RDS(ON) = 0.0200 Ω @ VGS = 4.5 V.
• Low gate charge.
• Fast switching speed.
• Low Crss.