General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. extremely low RDS(ON) in a small package.

FEATUREs
• 52 A, 60 V RDS(ON) = 15 mΩ @ VGS = 10 V
                      RDS(ON) = 18 mΩ @ VGS = 6 V
• Low gate charge
• Fast switching
• High performance trench technology for extremely
   low RDS(ON)

APPLICATIONs
• DC/DC converter
• Motor drives