General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

FEATUREs
• 3.6 A, 200 V. RDS(ON) = 130 mΩ @ VGS = 10 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability