Description
This N−Channel MOSFET is produced using onsemi advanced POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance.

FEATUREs
• RDS(on) = 6.25 mΩ (Typ.) @ VGS = 10 V, ID = 100 A
• Fast Switching
• Low Gate Charge
• High Performance Trench Technology for Extremely Low RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant

APPLICATIONs
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter