GENERAL DESCRIPTION
The serial electrical interface follows the industry-standard serial peripheral interface (SPI), providing a cost-effective non-volatile memory storage solution in systems where pin count must be kept to a minimum. The device is a 1Gb SLC SPI-NAND Flash memory device based on the standard parallel NAND Flash, but new command protocols and registers are defined for SPI operation. It is also an alternative to SPI-NOR, offering superior write performance and cost per bit over SPI-NOR.

FEATURES
• Voltage Supply: 3.3V (2.7V~3.6V)
• Organization
   - Memory Cell Array: (128M + 4M) x 8bit
   - Data Register: (2K + 64) x 8bit
• Automatic Program and Erase
   - Page Program: (2K + 64) Byte
   - Block Erase: (128K + 4K) Byte
• Page Read Operation
   - Page Size: (2K + 64) Byte
   - Read from Cell to Register with Internal ECC: 100us
• Memory Cell: 1bit/Memory Cell
• Support SPI-Mode 0 and SPI-Mode 31
• Fast Write Cycle Time
   - Program time:400us
   - Block Erase time: 4ms
• Hardware Data Protection
   - Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating Gate Technology
   - Internal ECC Requirement: 1bit/512Byte
   - Endurance: 100K Program/Erase cycles
   - Data Retention: 10 years
• Command Register Operation
• NOP: 4 cycles
• OTP Operation
• Bad-Block-Protect
• Boot Read