GENERAL DESCRIPTION
The F25L008A is a 8Megablt, 3V only CMOS Serial Flash memory device organized as 1M bytes of 8 bits. This device is packaged in 8-lead SOIC 200mil. ESMT’s memory devices reliably store memory data even after 100,000 program and erase cycles.
The F25L008A features a sector erase architecture. The device memory array is divided into 256 uniform sectors with 4K byte each ; 16 uniform blocks with 64K byte each. Sectors can be erased individually without affecting the data in other sectors. Blocks can be erased individually without affecting the data in other blocks. Whole chip erase capabilities provide the flexibility to revise the data in the device.

FEATURES
• Single supply voltage 2.7~3.6V
• Speed
   - Read max frequency : 33MHz
   - Fast Read max frequency : 50MHz; 100MHz
• Low power consumption
   - typical active current
   - 15 μ A typical standby current
• Reliability
   - 100,000 typical program/erase cycles
   - 20 years Data Retention
• Program
   - Byte program time 7 μ s(typical)
• Erase
   - Chip erase time 8s(typical)
   - Sector erase time 60ms (typical),
• Auto Address Increment (AAI) WORD Programming
   - Decrease total chip programming time over
   Byte-Program operations
• SPI Serial Interface
   - SPI Compatible : Mode 0 and Mode3
• End of program or erase detection
• Write Protect ( WP )
• Hold Pin ( HOLD )
• Package available
   - 8-pin SOIC 200-mil