GENERAL DESCRIPTION
The F25L004A is a 4 Megabit 3V only CMOS Serial Flash memory device. ESMT’s memory devices reliably store memory data even after 100,000 program and erase cycles.
The F25L004A features a sector erase architecture. The device memory array is divided into 128 uniform sectors with 4K byte each ; 8 uniform blocks with 64K byte each. Sectors can be erased individually without affecting the data in other sectors.
Blocks can be erased individually without affecting the data in other blocks. Whole chip erase capabilities provide the flexibility to revise the data in the device.
The sector protect/unprotect feature disables both program and erase operations in any combination of the sectors of the memory.

FEATURES
• Single supply voltage 2.7~3.6V
• Speed
   - Read max frequency : 33MHz
   - Fast Read max frequency : 50MHz; 75MHz; 100MHz
• Low power consumption
   - Active current : 40mA
   - Standby current : 75μA
• Reliability
   - 100,000 typical program/erase cycles
   - 20 years Data Retention
• Program
   - Byte program time 7 μ s(typical)
• Erase
   - Chip erase time 4s(typical)
   - Block erase time 1sec (typical)
   - Sector erase time 90ms(typical)
• Auto Address Increment (AAI) WORD Programming
   - Decrease total chip programming time over Byte-Program operations
• SPI Serial Interface
   - SPI Compatible : Mode 0 and Mode3
• End of program or erase detection
• Write Protect ( WP )
• Hold Pin ( HOLD )
• All Pb-free products are RoHS-Compliant