GENERAL DESCRIPTION
The EN29SL400 is an 4-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 524,288 bytes or 262144 words. Any byte can be programmed typically in 5µs. The EN29SL400 features 1.8V voltage read and write operation, with access time as fast as 70ns to eliminate the need for WAIT statements in high-performance microprocessor systems.

FEATURES
• Single power supply operation
   - Full voltage range:1.65-2.2 volt for read and
      write operations.
   - Ideal for battery-powered applications.
• High performance
   - Access times as fast as 70 ns
• Low power consumption (typical values at 5
   MHz)
   - 7 mA typical active read current
   - 15 mA typical program/erase current
   - 0.2 µA typical standby current
• Flexible Sector Architecture:
   - One 16 K-byte, two 8 K-byte, one 32 K-byte,
      and seven 64 K-byte sectors (byte mode)
   - One 8 K-word, two 4 K-word, one 16 K-word
      and seven 32 K-word sectors (word mode)
• Sector protection:
   - Hardware locking of sectors to prevent
      program or erase operations within individual
      sectors
   - Additionally, temporary Sector Unprotect
      allows code changes in previously locked
      sectors.
• High performance program/erase speed
   - Byte/Word program time: 5µs/7µs typical
   - Sector erase time: 500ms typical
• JEDEC Standard Embedded Erase and
   Program Algorithms
• JEDEC standard DATA# polling and toggle
   bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Erase Suspend / Resume modes:
   Read or program another Sector during
   Erase Suspend Mode
• Triple-metal double-poly triple-well COMS Flash
   Technology
• Low Vcc write inhibit < 1.2V
• Minimum 100K endurance cycle
• Package Options
   - 48-pin TSOP (Type 1)
   - 48-ball 6mm x 8mm FBGA
• Commercial and Industrial Temperature
   Range