GENERAL DESCRIPTION
   The EN29PL032A is a 32 Mega bit, 3.0 volt-only Page Mode and Simultaneous Read/Write Flash memory device organized as 2 Mega words. The devices are offered in the following packages: 48-pin TSOP
   The word-wide data (x16) appears on DQ15-DQ0. This device can be programmed in-system or in standard EPROM programmers. An 11.0 volt VPP is not required for write or erase operations.

Distinctive Characteristics
Architectural Advantages
• 32 Mbit Page Mode devices
   - Page size of 4 words: Fast page read access
      from random locations within the page
• Single power supply operation
   - Voltage range of 2.7V to 3.3V valid for MCP
      product
   - Single Voltage, 2.7V to 3.6V for Read and Write
      operations
• Simultaneous Read/Write Operation
   - Data can be continuously read from one bank
      while executing erase/ program functions in
      another bank
   - Zero latency switching from write to read
      operations
• FlexBank Architecture
   - 4 separate banks, with up to two simultaneous
      operations per device
   - Bank A: 4 Mbit (4 Kw x 8 and 32 Kw x 7)
   - Bank B: 12 Mbit (32 Kw x 24)
   - Bank C: 12 Mbit (32 Kw x 24)
   - Bank D: 4 Mbit (4 Kw x 8 and 32 Kw x 7)
• Secured Silicon Sector region
   - 64 words Secured Silicon Sector region
• Both top and bottom boot blocks in one device
• Cycling Endurance: 100K cycles per sector
   typical

Performance Characteristics
• High Performance
   - Page access times as fast as 25 ns
   - Random access times as fast as 70 ns
• Power consumption (typical values at 10 MHz)
   - 45 mA active read current
   - 17 mA program/erase current
   - 0.2 µA typical standby mode current