GENERAL DESCRIPTION
The EN29LV800J is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 10µs. The EN29LV800JJ features 3.0V voltage read and write operation, with access times as fast as 70ns to eliminate the need for WAIT states in high-performance microprocessor systems.

FEATURES
• 3V, single power supply operation
   - Minimizes system level power requirements
• Manufactured on 0.28 µm process technology
• High performance
   - Access times as fast as 70 ns
• Low power consumption (typical values at 5 MHz)
   - 7 mA typical active read current
   - 15 mA typical program/erase current
   - 1 µA typical standby current (standard access time to active mode)
• Flexible Sector Architecture:
   - One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode)
   - One 8 Kword, two 4 Kword, one 16 Kword and fifteen 32 Kword sectors (word mode)
   - Supports full chip erase
   - Individual sector erase supported
   - Sector protection:
      Hardware locking of sectors to prevent
      program or erase operations within individual
      sectors
      Additionally, temporary Sector Group
      Unprotect allows code changes in previously
      locked sectors.
• High performance program/erase speed
   - Byte/Word program time: 8µs typical
   - Sector erase time: 500ms typical
• JEDEC Standard program and erase commands
• JEDEC standard DATA polling and toggle bits feature
• Single Sector and Chip Erase
• Sector Unprotect Mode
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
   Read or program another Sector during Erase Suspend Mode
• 0.28 µm double-metal double-poly
   triple-well CMOS Flash Technology
• Low Vcc write inhibit < 2.5V
• >100K program/erase endurance cycle
• 48-pin TSOP (Type 1)
• Commercial Temperature Range