GENERAL DESCRIPTION
   The EN29LV010 is a 1-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 131,072 bytes. Any byte can be programmed typically in 8µs. The EN29LV010 features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems.

FEATURES
• Single power supply operation
   - Full voltage range: 2.7-3.6 volt read and write
      operations for battery-powered applications.
   - Regulated voltage range: 3.0-3.6 volt read
      and write operations for high performance
      3.3 volt microprocessors.
• High performance
   - Full voltage range: access times as fast as 55
      ns
   - Regulated voltage range: access times as fast
      as 45ns
• Low power consumption (typical values at 5
   MHz)
   - 7 mA typical active read current
   - 15 mA typical program/erase current
   - 1 µA typical standby current (standard access
      time to active mode)
• Flexible Sector Architecture:
   - Eight 16 Kbyte sectors
   - Supports full chip erase
   - Individual sector erase supported
   - Sector protection and unprotection:
      Hardware locking of sectors to prevent
      program or erase operations within individual
      sectors
• High performance program/erase speed
   - Byte program time: 8µs typical
   - Sector erase time: 500ms typical
• JEDEC Standard program and erase
   commands
• JEDEC standard DATA polling and toggle bits
   feature
• Single Sector and Chip Erase
• Embedded Erase and Program Algorithms
• Erase Suspend / Resume modes:
   Read or program another Sector during
   Erase Suspend Mode
• triple-metal double-poly triple-well CMOS Flash
   Technology
• Low Vcc write inhibit < 2.5V
• >100K program/erase endurance cycle
• Package options 
   - 8mm x 20mm 32-pin TSOP (Type 1)
   - 8mm x 14mm 32-pin TSOP (Type 1)
   - 32-pin PLCC
• Commercial and industrial Temperature Range