EFA025AL Даташит - Excelics Semiconductor, Inc.
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EFA025AL
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Excelics Semiconductor, Inc.
High Gain GaAs Power FET
• +20.0dBm TYPICAL OUTPUT POWER
• 11.5dB TYPICAL POWER GAIN AT 12GHz
• 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE
• Si3N4 PASSIVATION
• ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
• Idss SORTED IN 5mA PER BIN RANGE
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