DESCRIPTION
The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single power supply with a voltage input between 2.7 and 5.5 volts. The chip enable input ( CE ) is used for device selection and can be used in order to achieve the minimum standby current mode, which facilitates both battery operated and battery backup applications.

FEATURES
● Low-power CMOS design
● Standby current
    - 50 nA max at tA = 25°C VCC = 3.0V
    - 100 nA max at tA = 25°C VCC = 5.5V
    - 1 µA max at tA = 60°C VCC = 5.5V
● Full operation for VCC = 5.5V to 2.7V
● Data retention voltage = 5.5V to 2.0V
● Fast 5V access time
    - DS2016 - 100 100 ns
    - DS2016 - 150 150 ns
● Reduced-speed 3V access time
    - DS2016 - 100 250 ns
    - DS2016 - 150 250 ns
● Operating temperature range of -40°C to +85°C
● Full static operation
● TTL compatible inputs and outputs over voltage range of 5.5V to 2.7 volts.
● Available in 24-pin DIP and 24-pin SOIC packages
● Suitable for both battery operated and battery backup applications