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DS1220Y Даташит - ETC

DS1220AB image

Номер в каталоге
DS1220Y

Компоненты Описание

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7 Pages

File Size
247 kB

производитель
ETC
ETC ETC

[ArtsChip]

DESCRIPTION
The DS1220Y 16K Nonvolatile SRAM is a 16, 384-bit, fully static, nonvolatile RAM organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAM can be used in place of existing 2K x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or the 2816 EEPROM, allowing direst substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.


FEATURES
• 10 years minimum data retention in the absence of external power
• Data is automatically protected during power loss
• Directly replaces 2k x 8 volatile static RAM of EEPROM
• Unlimited write cycles
• Low-power CMOS
• JEDEC standard 24-pin DIP package
• Read and write access times as fast as 100ns
• Full ±10% operating range
• Optional industrial temperature range of -40 ℃ to +85℃, designated IND

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Номер в каталоге
Компоненты Описание
PDF
производитель
16k Nonvolatile SRAM
Dallas Semiconductor -> Maxim Integrated
16k Nonvolatile SRAM
Dallas Semiconductor -> Maxim Integrated
16k Nonvolatile SRAM ( Rev : 2010 )
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16k Nonvolatile SRAM
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16k Nonvolatile SRAM
Dallas Semiconductor -> Maxim Integrated
NVRAM 16k Nonvolatile SRAM
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2048k Nonvolatile SRAM ( Rev : 2010 )
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8M Nonvolatile SRAM
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64k Nonvolatile SRAM
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4096k Nonvolatile SRAM
Dallas Semiconductor -> Maxim Integrated

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