Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

FEATUREs
• LD-MOS Technology with the Lowest Figure of Merit:
   RDS(ON) = 0.065Ω to Minimize On-State Losses
   Qg = 2.5nC for Ultra-Fast Switching
• Vgs(TH) = -0.5V Typ. for a Low Turn-On Potential
• CSP with Footprint 1.0mm × 1.0mm
• Height = 0.62mm for Low Profile
• ESD = 3kV HBM Protection of Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• For automotive applications requiring specific change control
   (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and
   manufactured in IATF 16949 certified facilities), please refer
   to the related automotive grade (Q-suffix) part. A listing can
   be found at
   https://www.diodes.com/products/automotive/automotiveproducts/.
• This part is qualified to JEDEC standards (as references in
   AEC-Q) for High Reliability.
   https://www.diodes.com/quality/product-definitions/

APPLICATIONs
• Battery managements
• Load switches
• Battery protections