Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

FEATUREs
• LD-MOS Technology with the Lowest Figure of Merit:
   RDS(on) = 65mΩ to Minimize On-State Losses
   Qg = 2.5nC for Ultra-Fast Switching
• Vgs(th) = -0.6V typ. for a Low Turn-On Potential
• CSP with Footprint 1.0mm × 1.0mm
• Height = 0.62mm for Low Profile
• ESD = 3kV HBM Protection of Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability

APPLICATIONs
• Battery Management
• Load Switch
• Battery Protection