Diodes Incorporated. DMN3052LSS-13 Даташит, DMN3052LSS-13 PDF, даташитов - DataSheetBank

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DMN3052LSS-13(2009) Даташит - Diodes Incorporated.

DMN3052LSS image

Номер в каталоге

DMN3052LSS-13

Компоненты Описание

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Incorporated.

Diodes

Features
• Low On-Resistance
• 30mΩ @ VGS = 10V
• 40mΩ @ VGS = 4.5V
• 63mΩ @ VGS = 2.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability

Номер в каталоге

Компоненты Описание

PDF

производитель

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 2010 )

Diodes Incorporated.

SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated.

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SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 2015 )

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Single N-Channel Enhancement Mode Power MOSFET

Fortune Semiconductor Corp.

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N–CHANNEL ENHANCEMENT MODE MOSFET

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N–CHANNEL ENHANCEMENT MODE MOSFET

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N-channel enhancement mode MOSFET

Panasonic Corporation

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