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DMN26D0UFB4(2010) Даташит - Diodes Incorporated.

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DMN26D0UFB4

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6 Pages

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115.6 kB

производитель
Diodes
Diodes Incorporated. Diodes

Features
• N-Channel MOSFET
• Low On-Resistance:
   • 3.0 Ω @ 4.5V
   • 4.0 Ω @ 2.5V
   • 6.0 Ω @ 1.8V
   • 10 Ω @ 1.5V
• Very Low Gate Threshold Voltage, 1.2V max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• ESD Protected Gate
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability


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PDF
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