Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

FEATUREs and Benefits
• N-Channel MOSFET
• Low On-Resistance
• Very Low Gate Threshold Voltage, 1.05V Max
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package, 0.4mm Maximum Package
   Height
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability

APPLICATIONs
• DC-DC Converters
• Power Management Functions