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DMG4N60SK3(2015) Даташит - Diodes Incorporated.

DMG4N60SK3 image

Номер в каталоге
DMG4N60SK3

Компоненты Описание

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7 Pages

File Size
565.5 kB

производитель
Diodes
Diodes Incorporated. Diodes

Description
This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.


FEATUREs
• 100% Unclamped Inductive Switch (UIS) Test in Production
• Low Gate Input Resistance
• Low Input Capacitance
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)


APPLICATIONs
• Motor Control
• Backlighting
• DC-DC Converters
• Power Management Functions


Номер в каталоге
Компоненты Описание
PDF
производитель
600V N-Channel Enhancement Mode MOSFET
PANJIT INTERNATIONAL
600V N-Channel Enhancement Mode MOSFET
PANJIT INTERNATIONAL
600V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
8A 600V N-channel Enhancement Mode Power MOSFET
Jiangsu Donghai Semiconductor Technology Co.,Ltd
2A 600V N-channel Enhancement Mode Power MOSFET ( Rev : V3 )
Unspecified
8A 600V N-channel Enhancement Mode Power MOSFET
Jiangsu Donghai Semiconductor Technology Co.,Ltd
7A 600V N-channel Enhancement Mode Power MOSFET
Jiangsu Donghai Semiconductor Technology Co.,Ltd
2A 600V N-channel Enhancement Mode Power MOSFET ( Rev : V2 )
Unspecified
10A 600V N-channel Enhancement Mode Power MOSFET
Jiangsu Donghai Semiconductor Technology Co.,Ltd
8A 600V N-channel Enhancement Mode Power MOSFET
Jiangsu Donghai Semiconductor Technology Co.,Ltd

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