Features
• High Density UMOS with Schottky Barrier Diode
• Low Leakage Current at High Temperature
• High Conversion Efficiency
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Utilizes Diodes’ Monolithic SiMFET Technology to Increase
Conversion Efficiency
• UIS Tested, RG Tested
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability