DESCRIPTION
• High Collector Current-IC= 2A
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 20V(Min)
• Good Linearity of hFE
• Low Saturation Voltage
• Minimum Lot-to-Lot variations for robust device
   performance and reliable operation

APPLICATIONS
• Designed for high frequency, Low Vce(sat) middle power
   transistors in a plastic envelope, primarily for use in audio
   and general purpose applications.